1n5419 1n5420 fast recovery glass passivated silicon rectifier 3 amp, 500 and 600 volts description: the central semiconductor 1n5419 and 1n5420 are silicon rectifiers mounted in a hermetically sealed, glass passivated package, designed for general purpose applications where fast reverse recovery times and high reliability are required. maximum ratings: (t a =25c unless otherwise noted) symbol 1n5419 1n5420 units peak repetitive reverse voltage v rrm 500 600 v dc blocking voltage v r 500 600 v rms reverse voltage v r(rms) 350 420 v average forward current (t a =55c) i o 3.0 a peak forward surge current, tp=8.3ms i fsm 80 a operating and storage junction temperature t j , t stg -65 to +200 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =rated v rrm 1.0 a i r v r =rated v rrm , t a =100c 20 a i r v r =rated v rrm , t a =175c 2.0 ma v f i f =3.0a 1.1 v v f i f =9.0a 1.5 v bv r i r =50a (1n5419) 550 v bv r i r =50a (1n5420) 660 v c j v r =12v, f=1.0mhz (1n5419) 110 pf c j v r =12v, f=1.0mhz (1n5420) 100 pf t rr i f =0.5a, i r =1.0a, i rr =0.25a (1n5419) 250 ns t rr i f =0.5a, i r =1.0a, i rr =0.25a (1n5420) 400 ns marking: full part number gpr-4am case r2 (11-april 2011) www.centralsemi.com
1n5419 1n5420 fast recovery glass passivated silicon rectifier 3 amp, 500 and 600 volts gpr-4am case - mechanical outline www.centralsemi.com r2 (11-april 2011)
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